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IRFM120A
Fig 7. Breakdown Voltage vs. Temperature
1.2
3.0
N-CHANNEL
POWER MOSFET
Fig 8. On-Resistance vs. Temperature
2.5
1.1
2.0
1.0
1.5
1.0
0.9
@ Notes :
@ Notes :
1. V GS = 0 V
2. I D = 250 " A
0.5
1. V GS = 10 V
2. I D = 4.6 A
0.8
-75
-50
-25
0
25
50
75
100
125
150
175
0.0
-75
-50
-25
0
25
50
75
100
125
150
175
T J , Junction Temperature [ o C]
Fig 9. Max. Safe Operating Area
T J , Junction Temperature [ o C]
Fig 10. Max. Drain Current vs. Ambient Temperature
2.5
10 2
Operation in This Area
is Limited by R DS(on)
2.0
10 1
10 ms
100 " s
1 ms
10 " s
1.5
10 0
DC
100 ms
1.0
10 -1
@ Notes :
1. T A = 25 o C
2. T J = 150 o C
3. Single Pulse
0.5
10 -2 -1
10
10 0
10 1
10 2
0.0
25
50
75
100
125
150
V DS , Drain-Source Voltage [V]
10 2
D=0.5
Fig 11. Thermal Response
T A , Ambient Temperature [ o C]
10
1
0.2
0.1
0.05
@ Notes :
1. Z ! J A (t)=52 o C/W Max.
2. Duty Factor, D=t 1 /t 2
10 0
10 - 1
0.02
0.01
single pulse
3. T J M -T A =P D M *Z ! J A (t)
P DM
t 1
t 2
10 - 5
10 - 4
10 - 3
10 - 2
10 - 1
10 0
10 1
10 2
10 3
t 1 , Square Wave Pulse Duration
[sec]
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